Pro Tip: Become a Doping Master!
Try different combinations of dopants to see how they affect performance. The optimal ratio between n-type (Phosphorus, Arsenic) and p-type (Boron) dopants is key! Each material has its own sweet spot. Earn achievements by experimenting with different materials and configurations!
Bandgap
1.12 eV
Thermal Conductivity
150 W/(m·K)
Electron Mobility
1400 cm²/Vs
Hole Mobility
450 cm²/Vs
Common Dopants
N-Type
P-Type
Common Applications
Understanding Doping Concentrations
Doping concentrations are typically measured in parts per million (ppm) or atoms per cubic centimeter. Even tiny amounts of dopants dramatically change silicon's electrical properties.
(~0.01-10 ppm)Moderate Doping
(~10-500 ppm)Heavy Doping
(~500-2000 ppm)
Light Doping
Used for: Transistor channels, sensitive regions
Ratio: ~1 dopant per 100,000,000 silicon atoms
Moderate Doping
Used for: Wells, general purpose regions
Ratio: ~1 dopant per 1,000,000 silicon atoms
Heavy Doping
Used for: Contacts, source/drain regions
Ratio: ~1 dopant per 500,000 silicon atoms